IXFA10N60P vs IXFA10N80P

Product Attributes

Part Number IXFA10N60P IXFA10N80P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFA10N60P IXFA10N80P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 1mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V 2050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263 (IXFA) TO-263 (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB