IXDH35N60B vs IXDP35N60B

Product Attributes

Part Number IXDH35N60B IXDP35N60B
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXDH35N60B IXDP35N60B
Product Status Obsolete Active
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 60 A
Current - Collector Pulsed (Icm) 70 A 70 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 35A 2.7V @ 15V, 35A
Power - Max 250 W 250 W
Switching Energy 1.6mJ (on), 800µJ (off) 1.6mJ (on), 800µJ (off)
Input Type Standard Standard
Gate Charge 120 nC 120 nC
Td (on/off) @ 25°C - -
Test Condition 300V, 35A, 10Ohm, 15V 300V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-220-3
Supplier Device Package TO-247AD TO-220-3