IXDH30N120D1 vs IXDR30N120D1

Product Attributes

Part Number IXDH30N120D1 IXDR30N120D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXDH30N120D1 IXDR30N120D1
Product Status Active Active
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 60 A 50 A
Current - Collector Pulsed (Icm) 76 A 60 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A 2.9V @ 15V, 30A
Power - Max 300 W 200 W
Switching Energy 4.6mJ (on), 3.4mJ (off) 4.6mJ (on), 3.4mJ (off)
Input Type Standard Standard
Gate Charge 120 nC 120 nC
Td (on/off) @ 25°C - -
Test Condition 600V, 30A, 47Ohm, 15V 600V, 30A, 47Ohm, 15V
Reverse Recovery Time (trr) 40 ns 40 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD ISOPLUS247™