IXBX75N170 vs IXBX75N170A

Product Attributes

Part Number IXBX75N170 IXBX75N170A
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXBX75N170 IXBX75N170A
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1700 V 1700 V
Current - Collector (Ic) (Max) 200 A 110 A
Current - Collector Pulsed (Icm) 580 A 300 A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A 6V @ 15V, 42A
Power - Max 1040 W 1040 W
Switching Energy - 3.8mJ (off)
Input Type Standard Standard
Gate Charge 350 nC 358 nC
Td (on/off) @ 25°C - 26ns/418ns
Test Condition - 1360V, 42A, 1Ohm, 15V
Reverse Recovery Time (trr) 1.5 µs 360 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant
Supplier Device Package PLUS247™-3 PLUS247™-3