ISP75DP06LMXTSA1 vs ISP25DP06LMXTSA1

Product Attributes

Part Number ISP75DP06LMXTSA1 ISP25DP06LMXTSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
ISP75DP06LMXTSA1 ISP25DP06LMXTSA1
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 1.1A, 10V 250mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 77µA 2V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 10 V 13.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 30 V 420 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 4.2W (Tc) 1.8W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA