ISC0702NLSATMA1 vs ISC0703NLSATMA1

Product Attributes

Part Number ISC0702NLSATMA1 ISC0703NLSATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
ISC0702NLSATMA1 ISC0703NLSATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 135A (Tc) 13A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V 6.9mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2.3V @ 38µA 2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V 1400 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 100W (Tc) 3W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 PG-TDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN