ISC036N04NM5ATMA1 vs ISC046N04NM5ATMA1

Product Attributes

Part Number ISC036N04NM5ATMA1 ISC046N04NM5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
ISC036N04NM5ATMA1 ISC046N04NM5ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 98A (Tc) 19A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 49A, 10V 4.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3.4V @ 23µA 3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 21 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 20 V 1400 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 63W (Tc) 3W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN