ISC019N03L5SATMA1 vs ISZ019N03L5SATMA1

Product Attributes

Part Number ISC019N03L5SATMA1 ISZ019N03L5SATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
ISC019N03L5SATMA1 ISZ019N03L5SATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc) 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 30A, 10V 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 44 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 15 V 2800 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-5 PG-TSDSON-8-FL
Package / Case 8-PowerTDFN 8-PowerTDFN