IRLI530N vs IRLI530G

Product Attributes

Part Number IRLI530N IRLI530G
Manufacturer Infineon Technologies Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRLI530N IRLI530G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 5V
Rds On (Max) @ Id, Vgs 100mOhm @ 9A, 10V 160mOhm @ 5.8A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V 28 nC @ 5 V
Vgs (Max) ±16V ±10V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 930 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 41W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab