IRLI520N vs IRLI520G

Product Attributes

Part Number IRLI520N IRLI520G
Manufacturer Infineon Technologies Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRLI520N IRLI520G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8.1A (Tc) 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 5V
Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 10V 270mOhm @ 4.3A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±16V ±10V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V 490 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 37W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab