IRLHM620TRPBF vs IRLHM620TR2PBF

Product Attributes

Part Number IRLHM620TRPBF IRLHM620TR2PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRLHM620TRPBF IRLHM620TR2PBF
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 40A (Tc) 26A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V -
Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 4.5V 2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 50µA 1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 4.5 V 78 nC @ 4.5 V
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 3620 pF @ 10 V 3620 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.7W (Ta), 37W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package PQFN (3x3) PQFN (3x3)
Package / Case 8-PowerTDFN 8-VQFN Exposed Pad