IRL640A vs IRL640S

Product Attributes

Part Number IRL640A IRL640S
Manufacturer onsemi Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRL640A IRL640S
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 4V, 5V
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 5V 180mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 5 V 66 nC @ 5 V
Vgs (Max) ±20V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1705 pF @ 25 V 1800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 3.1W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220-3 D²PAK (TO-263)
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB