IRL60S216 vs IRL60B216

Product Attributes

Part Number IRL60S216 IRL60B216
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRL60S216 IRL60B216
Product Status Last Time Buy Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.95mOhm @ 100A, 10V 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 4.5 V 258 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 15330 pF @ 25 V 15570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package PG-TO263-3 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3