IRGSL4B60KD1PBF vs IRGS4B60KD1PBF

Product Attributes

Part Number IRGSL4B60KD1PBF IRGS4B60KD1PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IRGSL4B60KD1PBF IRGS4B60KD1PBF
Product Status Obsolete Obsolete
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 11 A 11 A
Current - Collector Pulsed (Icm) 22 A 22 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 4A 2.5V @ 15V, 4A
Power - Max 63 W 63 W
Switching Energy 73µJ (on), 47µJ (off) 73µJ (on), 47µJ (off)
Input Type Standard Standard
Gate Charge 12 nC 12 nC
Td (on/off) @ 25°C 22ns/100ns 22ns/100ns
Test Condition 400V, 4A, 100Ohm, 15V 400V, 4A, 100Ohm, 15V
Reverse Recovery Time (trr) 93 ns 93 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-262 D2PAK