IRG8P40N120KD-EPBF vs IRG8P50N120KD-EPBF

Product Attributes

Part Number IRG8P40N120KD-EPBF IRG8P50N120KD-EPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IRG8P40N120KD-EPBF IRG8P50N120KD-EPBF
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 60 A 80 A
Current - Collector Pulsed (Icm) 75 A 105 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A 2V @ 15V, 35A
Power - Max 305 W 350 W
Switching Energy 1.6mJ (on), 1.8mJ (off) 2.3mJ (on), 1.9mJ (off)
Input Type Standard Standard
Gate Charge 240 nC 315 nC
Td (on/off) @ 25°C 40ns/245ns 35ns/190ns
Test Condition 600V, 25A, 10Ohm, 15V 600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr) 80 ns 170 ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD