Part Number | IRG8P40N120KD-EPBF | IRG8P50N120KD-EPBF |
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Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - IGBTs - Single | Transistors - IGBTs - Single |
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Product Status | Obsolete | Obsolete |
IGBT Type | - | - |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V |
Current - Collector (Ic) (Max) | 60 A | 80 A |
Current - Collector Pulsed (Icm) | 75 A | 105 A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 25A | 2V @ 15V, 35A |
Power - Max | 305 W | 350 W |
Switching Energy | 1.6mJ (on), 1.8mJ (off) | 2.3mJ (on), 1.9mJ (off) |
Input Type | Standard | Standard |
Gate Charge | 240 nC | 315 nC |
Td (on/off) @ 25°C | 40ns/245ns | 35ns/190ns |
Test Condition | 600V, 25A, 10Ohm, 15V | 600V, 35A, 5Ohm, 15V |
Reverse Recovery Time (trr) | 80 ns | 170 ns |
Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 |
Supplier Device Package | TO-247AD | TO-247AD |