IRG8P15N120KD-EPBF vs IRG8P25N120KD-EPBF

Product Attributes

Part Number IRG8P15N120KD-EPBF IRG8P25N120KD-EPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IRG8P15N120KD-EPBF IRG8P25N120KD-EPBF
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 30 A 40 A
Current - Collector Pulsed (Icm) 30 A 45 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A 2V @ 15V, 15A
Power - Max 125 W 180 W
Switching Energy 600µJ (on), 600µJ (off) 800µJ (on), 900µJ (off)
Input Type Standard Standard
Gate Charge 98 nC 135 nC
Td (on/off) @ 25°C 15ns/170ns 20ns/170ns
Test Condition 600V, 10A, 10Ohm, 15V 600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr) 60 ns 70 ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD