IRG7PH35UD1-EP vs IRG7PH35UD-EP

Product Attributes

Part Number IRG7PH35UD1-EP IRG7PH35UD-EP
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IRG7PH35UD1-EP IRG7PH35UD-EP
Product Status Obsolete Obsolete
IGBT Type Trench Trench
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 50 A 50 A
Current - Collector Pulsed (Icm) 150 A 60 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A 2.2V @ 15V, 20A
Power - Max 179 W 180 W
Switching Energy 620µJ (off) 1.06mJ (on), 620µJ (off)
Input Type Standard Standard
Gate Charge 130 nC 85 nC
Td (on/off) @ 25°C -/160ns 30ns/160ns
Test Condition 600V, 20A, 10Ohm, 15V 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) - 105 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD