IRG4BC10S vs IRG4BC10SD

Product Attributes

Part Number IRG4BC10S IRG4BC10SD
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IRG4BC10S IRG4BC10SD
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 14 A 14 A
Current - Collector Pulsed (Icm) 18 A 18 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A 1.8V @ 15V, 8A
Power - Max 38 W 38 W
Switching Energy 140µJ (on), 2.58mJ (off) 310µJ (on), 3.28mJ (off)
Input Type Standard Standard
Gate Charge 15 nC 15 nC
Td (on/off) @ 25°C 25ns/630ns 76ns/815ns
Test Condition 480V, 8A, 100Ohm, 15V 480V, 8A, 100Ohm, 15V
Reverse Recovery Time (trr) - 28 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220AB TO-220AB