IRFW730BTM vs IRFW710BTM

Product Attributes

Part Number IRFW730BTM IRFW710BTM
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFW730BTM IRFW710BTM
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.75A, 10V 3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V 330 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 73W (Tc) 3.13W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB