IRFW530ATM vs IRFW550ATM

Product Attributes

Part Number IRFW530ATM IRFW550ATM
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFW530ATM IRFW550ATM
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 100 V -
Current - Continuous Drain (Id) @ 25°C 14A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 110mOhm @ 7A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 55W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package D2PAK -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB -