IRFW550ATM vs IRFW520ATM

Product Attributes

Part Number IRFW550ATM IRFW520ATM
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFW550ATM IRFW520ATM
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 100 V
Current - Continuous Drain (Id) @ 25°C - 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 22 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 480 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 3.8W (Ta), 45W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - D2PAK
Package / Case - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB