IRFSL7730PBF vs IRFSL7530PBF

Product Attributes

Part Number IRFSL7730PBF IRFSL7530PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFSL7730PBF IRFSL7530PBF
Product Status Last Time Buy Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 407 nC @ 10 V 411 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13660 pF @ 25 V 13703 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 375W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA