IRFR11N25D vs IRFR12N25D

Product Attributes

Part Number IRFR11N25D IRFR12N25D
Manufacturer Vishay Siliconix Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFR11N25D IRFR12N25D
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C - 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id - 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 35 nC @ 10 V
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds - 810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 144W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63