IRFIZ24E vs IRFIZ24G

Product Attributes

Part Number IRFIZ24E IRFIZ24G
Manufacturer Infineon Technologies Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFIZ24E IRFIZ24G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 71mOhm @ 7.8A, 10V 100mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 25 V 640 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 29W (Tc) 37W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab