IRFI9Z24G vs IRFI9Z24N

Product Attributes

Part Number IRFI9Z24G IRFI9Z24N
Manufacturer Vishay Siliconix Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFI9Z24G IRFI9Z24N
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 5.1A, 10V 175mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 25 V 350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 37W (Tc) 29W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220AB Full-Pak
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack