IRFI520N vs IRFI520G

Product Attributes

Part Number IRFI520N IRFI520G
Manufacturer Infineon Technologies Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFI520N IRFI520G
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 4.3A, 10V 270mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V 360 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 37W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-FP TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab