IRFHM831TR2PBF vs IRFHM831TRPBF

Product Attributes

Part Number IRFHM831TR2PBF IRFHM831TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFHM831TR2PBF IRFHM831TRPBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 40A (Tc) 14A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 12A, 10V 7.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 16 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V 1050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 2.5W (Ta), 27W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PQFN (3x3) PQFN (3x3)
Package / Case 8-PowerTDFN 8-PowerTDFN