IRFHM830DTRPBF vs IRFHM830DTR2PBF

Product Attributes

Part Number IRFHM830DTRPBF IRFHM830DTR2PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFHM830DTRPBF IRFHM830DTR2PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc) 20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 4.3mOhm @ 20A, 10V 4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1797 pF @ 25 V 1797 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 37W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package PQFN (3x3) PQFN (3x3)
Package / Case 8-VQFN Exposed Pad 8-VQFN Exposed Pad