IRFH5110TR2PBF vs IRFH7110TR2PBF

Product Attributes

Part Number IRFH5110TR2PBF IRFH7110TR2PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFH5110TR2PBF IRFH7110TR2PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 63A (Tc) 11A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 12.4mOhm @ 37A, 10V 13.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 87 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 3152 pF @ 25 V 3240 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerVDFN 8-TQFN Exposed Pad