IRFH5220TRPBF vs IRFH5220TR2PBF

Product Attributes

Part Number IRFH5220TRPBF IRFH5220TR2PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFH5220TRPBF IRFH5220TR2PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 20A (Tc) 3.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 99.9mOhm @ 5.8A, 10V 99.9mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 50 V 1380 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3.6W (Ta), 8.3W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package PQFN (5x6) PQFN (5x6)
Package / Case 8-VQFN Exposed Pad 8-VQFN Exposed Pad