IRFH5210TRPBF vs IRFH5210TR2PBF

Product Attributes

Part Number IRFH5210TRPBF IRFH5210TR2PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFH5210TRPBF IRFH5210TR2PBF
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 55A (Tc) 10A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 14.9mOhm @ 33A, 10V 14.9mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 59 nC @ 10 V 59 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2570 pF @ 25 V 2570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.6W (Ta), 104W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN