IRFH5010TR2PBF vs IRFH5110TR2PBF

Product Attributes

Part Number IRFH5010TR2PBF IRFH5110TR2PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFH5010TR2PBF IRFH5110TR2PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 100A (Tc) 11A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V 12.4mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 72 nC @ 10 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 25 V 3152 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN