IRFH5010TRPBF vs IRFH5010TR2PBF

Product Attributes

Part Number IRFH5010TRPBF IRFH5010TR2PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFH5010TRPBF IRFH5010TR2PBF
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 100A (Tc) 13A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 25 V 4340 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.6W (Ta), 250W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN