IRFB38N20DPBF vs IRFB31N20DPBF

Product Attributes

Part Number IRFB38N20DPBF IRFB31N20DPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFB38N20DPBF IRFB31N20DPBF
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 54mOhm @ 26A, 10V 82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 107 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2370 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 300W (Tc) 3.1W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3