IRFB3207PBF vs IRFB3307PBF

Product Attributes

Part Number IRFB3207PBF IRFB3307PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRFB3207PBF IRFB3307PBF
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 75A, 10V 6.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 50 V 5150 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 330W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3