IRF9Z34NPBF vs IRF9Z34SPBF

Product Attributes

Part Number IRF9Z34NPBF IRF9Z34SPBF
Manufacturer Infineon Technologies Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF9Z34NPBF IRF9Z34SPBF
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V 1100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 68W (Tc) 3.7W (Ta), 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB D²PAK (TO-263)
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB