IRF9510PBF vs IRF9410PBF

Product Attributes

Part Number IRF9510PBF IRF9410PBF
Manufacturer Vishay Siliconix Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF9510PBF IRF9410PBF
Product Status Active Discontinued at Digi-Key
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.4A, 10V 30mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V 550 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 43W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB 8-SO
Package / Case TO-220-3 8-SOIC (0.154", 3.90mm Width)