IRF830B vs IRF830L

Product Attributes

Part Number IRF830B IRF830L
Manufacturer Fairchild Semiconductor Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF830B IRF830L
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.25A, 10V 1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V 610 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 73W (Tc) 3.1W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 I2PAK
Package / Case TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA