IRF7822PBF vs IRF7820PBF

Product Attributes

Part Number IRF7822PBF IRF7820PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF7822PBF IRF7820PBF
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta) 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 4.5V 78mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 5 V 44 nC @ 10 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 16 V 1750 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)