IRF7524D1PBF vs IRF7526D1PBF

Product Attributes

Part Number IRF7524D1PBF IRF7526D1PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF7524D1PBF IRF7526D1PBF
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V 200mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 4.5 V 11 nC @ 10 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 15 V 180 pF @ 25 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro8™ Micro8™
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)