IRF7477PBF vs IRF7478PBF

Product Attributes

Part Number IRF7477PBF IRF7478PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF7477PBF IRF7478PBF
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta) 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 14A, 10V 26mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 4.5 V 31 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2710 pF @ 15 V 1740 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)