IRF7475PBF vs IRF7471PBF

Product Attributes

Part Number IRF7475PBF IRF7471PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF7475PBF IRF7471PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 40 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 8.8A, 4.5V 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V 32 nC @ 4.5 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 6 V 2820 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)