IRF7453PBF vs IRF7473PBF

Product Attributes

Part Number IRF7453PBF IRF7473PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF7453PBF IRF7473PBF
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 100 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 1.3A, 10V 26mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 25 V 3180 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)