IRF7324D1 vs IRF7322D1

Product Attributes

Part Number IRF7324D1 IRF7322D1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF7324D1 IRF7322D1
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V 62mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 4.5 V 29 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 15 V 780 pF @ 15 V
FET Feature Schottky Diode (Isolated) Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)