IRF710PBF vs IRF7210PBF

Product Attributes

Part Number IRF710PBF IRF7210PBF
Manufacturer Vishay Siliconix Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF710PBF IRF7210PBF
Product Status Active Obsolete
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 12 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 4V @ 250µA 600mV @ 500µA (Min)
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 212 nC @ 5 V
Vgs (Max) ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V 17179 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 36W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB 8-SO
Package / Case TO-220-3 8-SOIC (0.154", 3.90mm Width)