IRF6898MTR1PBF vs IRF6893MTR1PBF

Product Attributes

Part Number IRF6898MTR1PBF IRF6893MTR1PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6898MTR1PBF IRF6893MTR1PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 213A (Tc) 29A (Ta), 168A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 35A, 10V 1.6mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100µA 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 4.5 V 38 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 5435 pF @ 13 V 3480 pF @ 13 V
FET Feature Schottky Diode (Body) -
Power Dissipation (Max) 2.1W (Ta), 78W (Tc) 2.1W (Ta), 69W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX