IRF6794MTR1PBF vs IRF6798MTR1PBF

Product Attributes

Part Number IRF6794MTR1PBF IRF6798MTR1PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6794MTR1PBF IRF6798MTR1PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 200A (Tc) 37A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 32A, 10V 1.3mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 4.5 V 75 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4420 pF @ 13 V 6560 pF @ 13 V
FET Feature Schottky Diode (Body) Schottky Diode (Body)
Power Dissipation (Max) 2.8W (Ta), 100W (Tc) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MX DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX DirectFET™ Isometric MX