IRF6710S2TRPBF vs IRF6720S2TRPBF

Product Attributes

Part Number IRF6710S2TRPBF IRF6720S2TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6710S2TRPBF IRF6720S2TRPBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 37A (Tc) 11A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 12A, 10V 8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 13 V 1140 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta), 15W (Tc) 1.7W (Ta), 17W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DirectFET™ Isometric S1 DirectFET™ Isometric S1
Package / Case DirectFET™ Isometric S1 DirectFET™ Isometric S1