IRF6718L2TR1PBF vs IRF6718L2TRPBF

Product Attributes

Part Number IRF6718L2TR1PBF IRF6718L2TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6718L2TR1PBF IRF6718L2TRPBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 61A (Ta), 270A (Tc) 61A (Ta), 270A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.7mOhm @ 61A, 10V 0.7mOhm @ 61A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150µA 2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 4.5 V 96 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 13 V 6500 pF @ 13 V
FET Feature - -
Power Dissipation (Max) 4.3W (Ta), 83W (Tc) 4.3W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET L6 DIRECTFET L6
Package / Case DirectFET™ Isometric L6 DirectFET™ Isometric L6