| Part Number | IRF6706S2TR1PBF | IRF6709S2TR1PBF |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 63A (Tc) | 12A (Ta), 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 17A, 10V | 7.8mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V | 12 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1810 pF @ 13 V | 1010 pF @ 13 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 1.8W (Ta), 26W (Tc) | 1.8W (Ta), 21W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric S1 | DirectFET™ Isometric S1 |
| Package / Case | DirectFET™ Isometric S1 | DirectFET™ Isometric S1 |